An apparatus is provided that includes a bit line above a substrate, a word line above the substrate, and a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a reversible resistance-switching memory element coupled in series with an isolation element. The isolation element includes a first selector element coupled in series with a second selector element. The first selector element includes a first snapback current, and the second selector element includes a second snapback current lower than the first snapback current.