Invention Grant
- Patent Title: Deposition of cobalt films with high deposition rate
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Application No.: US15995693Application Date: 2018-06-01
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Publication No.: US10559578B2Publication Date: 2020-02-11
- Inventor: Jacqueline S. Wrench , Jing Zhou , Fuqun Grace Vasiknanonte , Jiang Lu , Paul F. Ma , Nobuyuki Sasaki , Sree Rangasai V. Kesapragada , Sang Ho Yu , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/11551 ; H01L27/11578 ; H01L21/285 ; H01L21/8229 ; H01L21/8239 ; H01L21/822
Abstract:
Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.
Public/Granted literature
- US20180350826A1 Deposition Of Cobalt Films With High Deposition Rate Public/Granted day:2018-12-06
Information query
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