- 专利标题： Deposition of cobalt films with high deposition rate
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申请号： US15995693申请日： 2018-06-01
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公开(公告)号： US10559578B2公开(公告)日： 2020-02-11
- 发明人: Jacqueline S. Wrench , Jing Zhou , Fuqun Grace Vasiknanonte , Jiang Lu , Paul F. Ma , Nobuyuki Sasaki , Sree Rangasai V. Kesapragada , Sang Ho Yu , Mei Chang
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/11551 ; H01L27/11578 ; H01L21/285 ; H01L21/8229 ; H01L21/8239 ; H01L21/822
摘要：
Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.
公开/授权文献
- US20180350826A1 Deposition Of Cobalt Films With High Deposition Rate 公开/授权日：2018-12-06
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