Invention Grant
- Patent Title: Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer
-
Application No.: US15848707Application Date: 2017-12-20
-
Publication No.: US10566426B2Publication Date: 2020-02-18
- Inventor: Anton Mauder , Oliver Hellmund , Peter Irsigler , Jens Peter Konrath , David Laforet , Maik Langner , Markus Neuber , Hans-Joachim Schulze , Ralf Siemieniec , Knut Stahrenberg , Olaf Storbeck
- Applicant: Infineon Technologies AG
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Design IP
- Priority: DE102016124968 20161220
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/16 ; H01L21/28 ; H01L29/51
Abstract:
A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.
Public/Granted literature
- US20180175150A1 FORMING SILICON OXIDE LAYERS BY RADICAL OXIDATION AND SEMICONDUCTOR DEVICE WITH SILICON OXIDE LAYER Public/Granted day:2018-06-21
Information query
IPC分类:
