Invention Grant
- Patent Title: RF power amplifiers with diode linearizer
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Application No.: US15148167Application Date: 2016-05-06
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Publication No.: US10574190B2Publication Date: 2020-02-25
- Inventor: Oleksandr Gorbachov , Lisette L. Zhang , Lothar Musiol
- Applicant: SKYWORKS SOLUTIONS, INC.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Stetina Brunda Garred & Brucker
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/32 ; H03F3/193 ; H03F1/34

Abstract:
A radio frequency (RF) power amplifier circuit with a diode linearizer circuit. The power amplifier circuit has an input and an output, as well as a power amplifier transistor with a first terminal connected to the input, a second terminal connected to the output, and a third terminal. The linearizer circuit is connected to the third terminal and to ground, and has a non-linear current-voltage curve as well as a non-linear capacitance. The linearizer circuit reduces inter-modulation products in a current through the power amplifier transistor from the second terminal to the third terminal that corresponds to an input signal applied to the input.
Public/Granted literature
- US20160329866A1 RF POWER AMPLIFIERS WITH DIODE LINEARIZER Public/Granted day:2016-11-10
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