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公开(公告)号:US20180102753A1
公开(公告)日:2018-04-12
申请号:US15726953
申请日:2017-10-06
CPC分类号: H03H7/09 , H03H7/0115 , H03H7/0161 , H03H7/1708 , H03H7/1758 , H03H7/1791
摘要: A radio frequency (RF) filter circuit for rejecting one or more spurious components of an input signal has a first resonator circuit including a first capacitor and a first coupled inductor pair of a first inductor and a second inductor, and a second resonator circuit with a second capacitor and a second coupled inductor pair of a third inductor and a fourth inductor. First and second resonator coupling capacitors are connected to the first resonator circuit and the second resonator circuit. A first port and a second port are connected to the first resonator circuit and the second resonator, with the filtered signal of the input signal passed through both the first resonator circuit and the second resonator circuit being output.
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公开(公告)号:US20180097482A1
公开(公告)日:2018-04-05
申请号:US15720335
申请日:2017-09-29
发明人: Oleksandr Gorbachov , Qiang Li , Floyd Ashbaugh , Aydin Seyedi , Lothar Musiol , Lisette L. Zhang
CPC分类号: H03F3/193 , H03F1/0261 , H03F1/301 , H03F1/3205 , H03F2200/18 , H03F2200/451
摘要: An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A mirror transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal.
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公开(公告)号:US10944008B2
公开(公告)日:2021-03-09
申请号:US15370950
申请日:2016-12-06
IPC分类号: H01L29/786 , H01L27/13 , H01L29/06 , H01L29/10
摘要: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.
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公开(公告)号:US10396833B2
公开(公告)日:2019-08-27
申请号:US16154313
申请日:2018-10-08
摘要: A radio frequency front end circuit includes an output signal transmission line, an amplifier circuit with an input connected to a radio frequency signal source and an output connected to the output signal transmission line. A harmonic suppression circuit is connected to the amplifier circuit, and includes an active circuit element having a frequency-dependent impedance and is tuned as a reflective trap with a negative capacitance for one or more rejection frequency ranges each corresponding to a multiple of a fundamental frequency of a signal generated by the radio frequency signal source.
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公开(公告)号:US20180262170A1
公开(公告)日:2018-09-13
申请号:US15978514
申请日:2018-05-14
CPC分类号: H03F3/21 , H03F1/34 , H03F1/342 , H03F1/565 , H03F3/191 , H03F3/193 , H03F3/195 , H03F3/45475 , H03F2200/144 , H03F2200/15 , H03F2200/171 , H03F2200/225 , H03F2200/294 , H03F2200/369 , H03F2200/372 , H03F2200/391 , H03F2200/451 , H03F2203/45222 , H03F2203/45526 , H03H11/481
摘要: A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.
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公开(公告)号:US09985592B2
公开(公告)日:2018-05-29
申请号:US15153605
申请日:2016-05-12
IPC分类号: H03G3/12 , H03F3/21 , H03F1/56 , H03F3/193 , H03F3/195 , H03F3/45 , H03H11/48 , H03F3/191 , H03F1/34
CPC分类号: H03F3/21 , H03F1/34 , H03F1/342 , H03F1/565 , H03F3/191 , H03F3/193 , H03F3/195 , H03F3/45475 , H03F2200/144 , H03F2200/15 , H03F2200/171 , H03F2200/225 , H03F2200/294 , H03F2200/369 , H03F2200/372 , H03F2200/391 , H03F2200/451 , H03F2203/45222 , H03F2203/45526 , H03H11/481
摘要: A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.
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公开(公告)号:US20170085223A1
公开(公告)日:2017-03-23
申请号:US15272173
申请日:2016-09-21
CPC分类号: H04B1/40 , G05F3/262 , H01L23/66 , H01L2223/6644 , H03F1/0261 , H03F1/30 , H03F1/301 , H03F1/304 , H03F3/193 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/21 , H03F2200/294 , H03F2200/451
摘要: A current mirror circuit connectible to an amplifier circuit to set a bias point thereof includes a current mirror circuit, and a bias resistor connected thereto. The bias resistor is connectible to the amplifier circuit. A first helper circuit is connected in parallel with the bias resistor, and is selectively activated for a first predetermined duration by a first control signal. The activated first helper circuit defines a lower resistance path relative to the bias resistor to shorten a rising transient response of the amplifier circuit as the current mirror circuit is activated.
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公开(公告)号:US10516379B2
公开(公告)日:2019-12-24
申请号:US15726953
申请日:2017-10-06
摘要: A radio frequency (RF) filter circuit for rejecting one or more spurious components of an input signal has a first resonator circuit including a first capacitor and a first coupled inductor pair of a first inductor and a second inductor, and a second resonator circuit with a second capacitor and a second coupled inductor pair of a third inductor and a fourth inductor. First and second resonator coupling capacitors are connected to the first resonator circuit and the second resonator circuit. A first port and a second port are connected to the first resonator circuit and the second resonator, with the filtered signal of the input signal passed through both the first resonator circuit and the second resonator circuit being output.
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公开(公告)号:US20190334564A1
公开(公告)日:2019-10-31
申请号:US16506019
申请日:2019-07-09
摘要: A radio frequency front end circuit includes an output signal transmission line, an amplifier circuit with an input connected to a radio frequency signal source and an output connected to the output signal transmission line. A harmonic suppression circuit is connected to the amplifier circuit, and includes an active circuit element having a frequency-dependent impedance and is tuned as a reflective trap with a negative capacitance for one or more rejection frequency ranges each corresponding to a multiple of a fundamental frequency of a signal generated by the radio frequency signal source.
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公开(公告)号:US10419057B2
公开(公告)日:2019-09-17
申请号:US15272173
申请日:2016-09-21
摘要: A current mirror circuit connectible to an amplifier circuit to set a bias point thereof includes a current mirror circuit, and a bias resistor connected thereto. The bias resistor is connectible to the amplifier circuit. A first helper circuit is connected in parallel with the bias resistor, and is selectively activated for a first predetermined duration by a first control signal. The activated first helper circuit defines a lower resistance path relative to the bias resistor to shorten a rising transient response of the amplifier circuit as the current mirror circuit is activated.
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