Example embodiments relate to methods for forming source/drain contacts. One embodiment includes a method for forming a source contact and a drain contact in a semiconductor structure. The method includes providing a semiconductor structure that includes a semiconductor active area having channel, source, and drain regions, a gate structure on the channel region, a gate plug on the gate structure, spacers lining side walls of the gate structure and of the gate plug, an etch stop layer covering the source and gain regions, a sacrificial material on the etch stop layer over the source and drain regions, and a masking structure that masks the source and drain regions. The method also includes forming gaps, removing the masking structure, filling the gaps, exposing the sacrificial material, removing the sacrificial material, removing the etch stop layer, and forming the source contact and the drain contact by depositing a conductive material.