Invention Grant
- Patent Title: Spin current magnetization rotating element, magnetoresistive effect element and magnetic memory
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Application No.: US16091240Application Date: 2018-01-26
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Publication No.: US10593868B2Publication Date: 2020-03-17
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2017-034757 20170227
- International Application: PCT/JP2018/002516 WO 20180126
- International Announcement: WO2018/155078 WO 20180830
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L43/02 ; H01L43/10 ; H01L27/22 ; H01F10/32 ; G11C11/16 ; H01L21/8239 ; H01L43/08 ; H01L43/12
Abstract:
A spin current magnetization rotating element of the present disclosure includes a first ferromagnetic metal layer and a spin-orbit torque wiring, in which the spin-orbit torque wiring has a structure in which spin conduction layers and interface spin generation layers are alternately laminated, and one of the spin conduction layers is in closest proximity to the first ferromagnetic metal layer.
Public/Granted literature
- US20190131517A1 SPIN CURRENT MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2019-05-02
Information query
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