Invention Grant
- Patent Title: Method for fabricating spin logic devices from in-situ deposited magnetic stacks
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Application No.: US15519810Application Date: 2014-12-18
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Publication No.: US10600957B2Publication Date: 2020-03-24
- Inventor: David Michalak , Sasikanth Manipatruni , James Clarke , Dmitri Nikonov , Ian Young
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2014/071220 WO 20141218
- International Announcement: WO2016/099516 WO 20160623
- Main IPC: H01L43/10
- IPC: H01L43/10 ; G01R33/12 ; G11B5/39 ; H01L43/08 ; H01L43/12 ; G01D5/20 ; H01L43/02

Abstract:
Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ. Described is an apparatus comprising: a magnet formed on a substrate or a template, the magnet being formed under crystallographic, electromagnetic, or thermodynamic conditions, the magnet having an interface; and a first layer of non-magnet conductive material formed on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ.
Public/Granted literature
- US20170256707A1 METHOD FOR FABRICATING SPIN LOGIC DEVICES FROM IN-SITU DEPOSITED MAGNETIC STACKS Public/Granted day:2017-09-07
Information query
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