公开(公告)号：US10600957B2

公开(公告)日：2020-03-24

申请号：US15519810

申请日：2014-12-18

Applicant: INTEL CORPORATION

Inventor： David Michalak ,  Sasikanth Manipatruni ,  James Clarke ,  Dmitri Nikonov ,  Ian Young

IPC: H01L43/10 ,  G01R33/12 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12 ,  G01D5/20 ,  H01L43/02

Abstract: Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ. Described is an apparatus comprising: a magnet formed on a substrate or a template, the magnet being formed under crystallographic, electromagnetic, or thermodynamic conditions, the magnet having an interface; and a first layer of non-magnet conductive material formed on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ.

公开(公告)号：US20170256707A1

公开(公告)日：2017-09-07

申请号：US15519810

申请日：2014-12-18

Applicant: INTEL CORPORATION

Inventor： David Michalak ,  Sasikanth Manipatruni ,  James Clarke ,  Dmitri Nikonov ,  Ian Young

IPC: H01L43/10 ,  G01D5/20 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/10 ,  G01D5/2033 ,  G01R33/1284 ,  G11B5/3993 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ. Described is an apparatus comprising: a magnet formed on a substrate or a template, the magnet being formed under crystallographic, electromagnetic, or thermodynamic conditions, the magnet having an interface; and a first layer of non-magnet conductive material formed on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ.

公开(公告)号：US20170263853A1

公开(公告)日：2017-09-14

申请号：US15329987

申请日：2014-09-03

Applicant: INTEL CORPORATION

Inventor： Sasikanth Manipatruni ,  Anurag Chaudhry ,  Dmitri Nikonov ,  David Michalak ,  Stephen Cea ,  Ian Young

IPC: H01L43/02 ,  H01L27/22 ,  H01F41/30 ,  H01L43/10 ,  H01F10/16 ,  H01F10/32 ,  G11C11/16 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/16 ,  H01F10/3222 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices and spin logic devices, wherein a strain engineered interface is formed within at least one magnet within these devices. In one embodiment, the spin transfer torque memory devices may include a free magnetic layer stack comprising a crystalline magnetic layer abutting a crystalline stressor layer. In another embodiment, the spin logic devices may include an input magnet, an output magnet; wherein at least one of the input magnet and the output magnet comprises a crystalline magnetic layer abutting crystalline stressor layer and/or the crystalline magnetic layer abutting a crystalline spin-coherent channel extending between the input magnet and the output magnet.