Invention Grant
- Patent Title: Silicide films through selective deposition
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Application No.: US16220816Application Date: 2018-12-14
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Publication No.: US10607841B2Publication Date: 2020-03-31
- Inventor: Swaminathan Srinivasan , Abhijit Basu Mallick , Nicolas Breil
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/3105 ; H01L21/768 ; H01L21/28 ; C23C16/04 ; C23C14/04
Abstract:
Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.
Public/Granted literature
- US20190189453A1 Silicide Films Through Selective Deposition Public/Granted day:2019-06-20
Information query
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