Invention Grant
- Patent Title: Etching method and plasma processing apparatus
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Application No.: US15690660Application Date: 2017-08-30
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Publication No.: US10622269B2Publication Date: 2020-04-14
- Inventor: Miyako Matsui , Kenichi Kuwahara , Naoki Yasui , Masaru Izawa , Tatehito Usui , Takeshi Ohmori
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5dbe6c7c
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/66 ; H01L21/3213 ; H01L21/311 ; H01L21/3065 ; H01L21/306 ; H01J37/32 ; G01B11/06
Abstract:
The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
Public/Granted literature
- US10665516B2 Etching method and plasma processing apparatus Public/Granted day:2020-05-26
Information query
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