公开(公告)号：US10622269B2

公开(公告)日：2020-04-14

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako Matsui ,  Kenichi Kuwahara ,  Naoki Yasui ,  Masaru Izawa ,  Tatehito Usui ,  Takeshi Ohmori

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/306 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

公开(公告)号：US10665516B2

公开(公告)日：2020-05-26

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako Matsui ,  Kenichi Kuwahara ,  Naoki Yasui ,  Masaru Izawa ,  Tatehito Usui ,  Takeshi Ohmori

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/306 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.