- 专利标题： Polishing with measurement prior to deposition of outer layer
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申请号： US15173584申请日： 2016-06-03
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公开(公告)号： US10651098B2公开(公告)日： 2020-05-12
- 发明人: Tomohiko Kitajima , Jeffrey Drue David , Jun Qian , Taketo Sekine , Garlen C. Leung , Sidney P. Huey
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Fish & Richardson P.C.
- 主分类号： B24B49/10
- IPC分类号： B24B49/10 ; H01L21/66 ; H01L21/67 ; B24B37/013 ; H01L21/321 ; H01L21/3105
摘要：
A method of controlling polishing includes storing a base measurement, the base measurement being a measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of an outer layer over the at least one layer, after deposition of the outer layer over the at least one layer and during polishing of the outer layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.
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