- Patent Title: Semiconductor device including variable resistance memory device
-
Application No.: US16392969Application Date: 2019-04-24
-
Publication No.: US10651236B2Publication Date: 2020-05-12
- Inventor: Kil-ho Lee , Yoon-jong Song , Gwan-hyeob Koh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3af3a36e
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/12

Abstract:
A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.
Public/Granted literature
- US20190252463A1 SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE MEMORY DEVICE Public/Granted day:2019-08-15
Information query
IPC分类: