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公开(公告)号:US10651236B2
公开(公告)日:2020-05-12
申请号:US16392969
申请日:2019-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kil-ho Lee , Yoon-jong Song , Gwan-hyeob Koh
Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.
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公开(公告)号:US20180350876A1
公开(公告)日:2018-12-06
申请号:US15858349
申请日:2017-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kil-ho Lee , Yoon-jong Song , Gwan-hyeob Koh
CPC classification number: H01L27/228 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.
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公开(公告)号:US20190252463A1
公开(公告)日:2019-08-15
申请号:US16392969
申请日:2019-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kil-ho Lee , Yoon-jong Song , Gwan-hyeob Koh
CPC classification number: H01L27/228 , G11C11/161 , G11C11/1655 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.
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公开(公告)号:US10319784B2
公开(公告)日:2019-06-11
申请号:US15858349
申请日:2017-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kil-ho Lee , Yoon-jong Song , Gwan-hyeob Koh
Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.
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