Invention Grant
- Patent Title: Etching method
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Application No.: US16069757Application Date: 2017-05-16
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Publication No.: US10658189B2Publication Date: 2020-05-19
- Inventor: Yoshinari Hatazaki , Wakako Ishida , Kensuke Taniguchi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b2155bd
- International Application: PCT/JP2017/018347 WO 20170516
- International Announcement: WO2017/208807 WO 20171207
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01J37/32 ; H01L21/67 ; H01L21/683
Abstract:
A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.
Public/Granted literature
- US20190080917A1 ETCHING METHOD Public/Granted day:2019-03-14
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