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    Etching method
    1.
    发明授权
    Etching method 有权

    公开(公告)号：US10658189B2

    公开(公告)日：2020-05-19

    申请号：US16069757

    申请日：2017-05-16

    Applicant: Tokyo Electron Limited

    Inventor： Yoshinari Hatazaki ,  Wakako Ishida ,  Kensuke Taniguchi

    IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.

    ETCHING METHOD
    2.
    发明申请
    ETCHING METHOD 审中-公开

    公开(公告)号：US20190080917A1

    公开(公告)日：2019-03-14

    申请号：US16069757

    申请日：2017-05-16

    Applicant: Tokyo Electron Limited

    Inventor： Yoshinari Hatazaki ,  Wakako Ishida ,  Kensuke Taniguchi

    IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

    Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.

    Pulsed Capacitively Coupled Plasma Processes
    4.
    发明申请
    Pulsed Capacitively Coupled Plasma Processes 有权

    公开(公告)号：US20230081352A1

    公开(公告)日：2023-03-16

    申请号：US17991527

    申请日：2022-11-21

    Applicant: Tokyo Electron Limited

    Inventor： Peter Lowell George Ventzek ,  Alok Ranjan ,  Kensuke Taniguchi ,  Shinya Morikita

    IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H05H1/46

    Abstract: A method of plasma processing includes cyclically performing a cycle including the steps of performing a glow phase and performing an afterglow phase. The glow phase includes providing a first SP pulse comprising a first SP power level for a first duration to an SP electrode to generate a capacitively coupled plasma in a plasma processing chamber. The first SP pulse terminates at the end of the glow phase. The afterglow phase is performed after the glow phase and includes providing a BP pulse train to a BP electrode coupled to a target substrate within the plasma processing chamber in an afterglow of the capacitively coupled plasma for a second duration between about 10 μs and about 100 μs. The BP pulse train includes a plurality of BP spikes. Each of the plurality of BP spikes is a DC pulse that has a first BP power level.

    Pulsed capacitively coupled plasma processes
    6.
    发明授权
    Pulsed capacitively coupled plasma processes 有权

    公开(公告)号：US11545364B2

    公开(公告)日：2023-01-03

    申请号：US17001327

    申请日：2020-08-24

    Applicant: Tokyo Electron Limited

    Inventor： Peter Ventzek ,  Alok Ranjan ,  Kensuke Taniguchi ,  Shinya Morikita

    IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/46

    Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

    PULSED CAPACITIVELY COUPLED PLASMA PROCESSES
    7.
    发明申请
    PULSED CAPACITIVELY COUPLED PLASMA PROCESSES 有权

    公开(公告)号：US20220059358A1

    公开(公告)日：2022-02-24

    申请号：US17001327

    申请日：2020-08-24

    Applicant: Tokyo Electron Limited

    Inventor： Peter Ventzek ,  Alok Ranjan ,  Kensuke Taniguchi ,  Shinya Morikita

    IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H05H1/46

    Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

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