公开(公告)号：US11557485B2

公开(公告)日：2023-01-17

申请号：US17357049

申请日：2021-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide Kihara ,  Toru Hisamatsu ,  Kensuke Taniguchi ,  Yoshinari Hatazaki

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

公开(公告)号：US11094551B2

公开(公告)日：2021-08-17

申请号：US16713945

申请日：2019-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide Kihara ,  Toru Hisamatsu ,  Kensuke Taniguchi ,  Yoshinari Hatazaki

IPC: H01L21/3065 ,  H01J37/32

Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.

公开(公告)号：US11454744B2

公开(公告)日：2022-09-27

申请号：US16644333

申请日：2019-06-07

Applicant: Tokyo Electron Limited

Inventor： Yoshinari Hatazaki ,  Takashi Shinyama

IPC: G02B3/00 ,  B29D11/00 ,  H01L21/3065 ,  H05H1/46

Abstract: A method for producing a microlens according to the present invention includes an etching step and a surface treatment step. In the etching step, a target object which is obtained by forming a second organic film having a lens shape on a first organic film that is formed on a substrate is subjected to etching that uses a plasma of a first processing gas, while using the second organic film as a mask, so that the first organic film is etched so as to transfer the lens shape of the second organic film to the first organic film, thereby forming a microlens in the first organic film. In the surface treatment step, a surface treatment is performed so as to smooth the surface of the microlens that is formed in the first organic film.

公开(公告)号：US10658189B2

公开(公告)日：2020-05-19

申请号：US16069757

申请日：2017-05-16

Applicant: Tokyo Electron Limited

Inventor： Yoshinari Hatazaki ,  Wakako Ishida ,  Kensuke Taniguchi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.

公开(公告)号：US20190080917A1

公开(公告)日：2019-03-14

申请号：US16069757

申请日：2017-05-16

Applicant: Tokyo Electron Limited

Inventor： Yoshinari Hatazaki ,  Wakako Ishida ,  Kensuke Taniguchi

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.