Invention Grant
- Patent Title: Bipolar transistor and radio-frequency power amplifier module
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Application No.: US16125234Application Date: 2018-09-07
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Publication No.: US10665704B2Publication Date: 2020-05-26
- Inventor: Isao Obu , Yasunari Umemoto , Masahiro Shibata , Shigeki Koya , Masao Kondo , Takayuki Tsutsui
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@360db4a5
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L23/00 ; H03F3/24 ; H03F1/56 ; H01L29/205 ; H03F3/195 ; H03F3/213 ; H01L21/308 ; H01L21/311 ; H01L21/285 ; H01L21/02 ; H01L21/306 ; H01L29/423 ; H01L29/417 ; H01L29/08 ; H01L29/10 ; H03F1/30 ; H01L29/45 ; H01L29/735 ; H01L27/102 ; H01L29/66 ; H03F3/21
Abstract:
A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.
Public/Granted literature
- US20190088768A1 BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE Public/Granted day:2019-03-21
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