Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16178542Application Date: 2018-11-01
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Publication No.: US10665772B2Publication Date: 2020-05-26
- Inventor: Yu-Chun Chen , Ya-Sheng Feng , Chiu-Jung Chiu , Hung-Chan Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2821b633
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01F10/32 ; H01L23/535 ; H01L43/12 ; H01F41/34 ; H01L27/22 ; H01L43/10 ; G11C11/16

Abstract:
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the MTJ, and a second spacer on another side of the MTJ, wherein the first spacer and the second spacer are asymmetric. Specifically, the MTJ further includes a first bottom electrode disposed on a metal interconnection, a capping layer on the bottom electrode, and a top electrode on the capping layer, in which a top surface of the first spacer is even with a top surface of the top electrode and a top surface of the second spacer is lower than the top surface of the top electrode and higher than the top surface of the capping layer.
Public/Granted literature
- US20200111950A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-04-09
Information query
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