Invention Grant
- Patent Title: Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
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Application No.: US16194140Application Date: 2018-11-16
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Publication No.: US10672899B2Publication Date: 2020-06-02
- Inventor: Timothy Vasen , Gerben Doornbos , Matthias Passlack
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/775 ; H01L29/205 ; H01L29/66 ; H01L29/10 ; H01L29/08

Abstract:
The current disclosure describes a tunnel FET device including a P-I-N heterojunction structure. A high-K dielectric layer and a metal gate wrap around the intrinsic channel layer with an interlayer positioned between high-K dielectric layer and the intrinsic channel layer of the P-I-N heterojunction. The interlayer prevents charge carriers from reaching the interface with high-K dielectric layer under the trap-assisted tunneling effect and reduces OFF state leakage.
Public/Granted literature
- US20200006542A1 TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING LEAKAGE Public/Granted day:2020-01-02
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