Invention Grant
- Patent Title: III-nitride tunnel junction with modified P-N interface
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Application No.: US15773864Application Date: 2016-11-01
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Publication No.: US10685835B2Publication Date: 2020-06-16
- Inventor: Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland SA
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST)
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST)
- Current Assignee Address: US CA Oakland SA
- Agency: Gates & Cooper LLP
- International Application: PCT/US2016/059929 WO 20161101
- International Announcement: WO2017/079168 WO 20170511
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L31/18 ; H01L33/00 ; H01L21/02 ; H01L29/15 ; H01L29/20 ; H01L29/207 ; H01L29/36 ; H01L29/885 ; H01L31/0304 ; H01L31/0352 ; H01L33/06 ; H01L33/32 ; H01L29/88 ; H01L33/04
Abstract:
A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
Public/Granted literature
- US20180374699A1 III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE Public/Granted day:2018-12-27
Information query
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