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1.发明授权公开(公告)号：US11164997B2
公开(公告)日：2021-11-02
申请号：US16320924
申请日：2017-08-17
IPC分类号： H01L33/32 , H01L33/14 , H01L33/00 , H01L33/04 , H01L33/42 , H01L33/20 , H01L33/38 , H01S5/343
摘要： A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.
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公开(公告)号：US10685835B2
公开(公告)日：2020-06-16
申请号：US15773864
申请日：2016-11-01
发明人： Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/00 , H01L31/18 , H01L33/00 , H01L21/02 , H01L29/15 , H01L29/20 , H01L29/207 , H01L29/36 , H01L29/885 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/32 , H01L29/88 , H01L33/04
摘要： A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
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公开(公告)号：US20220181513A1
公开(公告)日：2022-06-09
申请号：US17539345
申请日：2021-12-01
发明人： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , H01L21/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06
摘要： A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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公开(公告)号：US10985285B2
公开(公告)日：2021-04-20
申请号：US16325246
申请日：2017-08-17
发明人： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L31/0304 , H01L29/207 , H01L33/32 , H01L33/00 , H01L21/02 , H01L29/36
摘要： A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.
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公开(公告)号：US20180374699A1
公开(公告)日：2018-12-27
申请号：US15773864
申请日：2016-11-01
发明人： Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/02 , H01L29/15 , H01L29/20 , H01L29/207 , H01L29/36 , H01L29/885 , H01L31/18 , H01L31/0352 , H01L31/0304 , H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L21/02584 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/15 , H01L29/2003 , H01L29/207 , H01L29/365 , H01L29/88 , H01L29/885 , H01L31/03044 , H01L31/035236 , H01L31/1856 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/32
摘要： A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
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公开(公告)号：US11348908B2
公开(公告)日：2022-05-31
申请号：US16325709
申请日：2017-08-17
摘要： A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
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7.发明申请公开(公告)号：US20200335663A1
公开(公告)日：2020-10-22
申请号：US16075949
申请日：2017-02-06
发明人： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
摘要： A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
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8.发明申请公开(公告)号：US20190165213A1
公开(公告)日：2019-05-30
申请号：US16320924
申请日：2017-08-17
摘要： A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.
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公开(公告)号：US11411137B2
公开(公告)日：2022-08-09
申请号：US16075949
申请日：2017-02-06
发明人： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
摘要： A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
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公开(公告)号：US11217722B2
公开(公告)日：2022-01-04
申请号：US15743023
申请日：2016-07-11
发明人： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/02 , H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06 , H01S5/026 , H01S5/183 , H01S5/343
摘要： A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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