Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US16019773Application Date: 2018-06-27
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Publication No.: US10685858B2Publication Date: 2020-06-16
- Inventor: Hiroyuki Higashi , Takahisa Otsuka , Kazuyoshi Shinohara , Takashi Nakazawa , Seiya Fujimoto , Yuichi Douki
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4bb3b53f
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3065 ; H01L21/306
Abstract:
The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.
Public/Granted literature
- US20190006206A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2019-01-03
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