Invention Grant
- Patent Title: Memory channel that supports near memory and far memory access
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Application No.: US16405524Application Date: 2019-05-07
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Publication No.: US10691626B2Publication Date: 2020-06-23
- Inventor: Bill Nale , Raj K. Ramanujan , Muthukumar P. Swaminathan , Tessil Thomas , Taarinya Polepeddi
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F13/40 ; G06F13/42 ; G06F12/0804 ; G06F9/46 ; G06F12/0868 ; G06F11/10 ; G06F12/02 ; G06F12/0802 ; G06F12/0897 ; G06F12/0811

Abstract:
A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.
Public/Granted literature
- US20190332556A1 MEMORY CHANNEL THAT SUPPORTS NEAR MEMORY AND FAR MEMORY ACCESS Public/Granted day:2019-10-31
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