Invention Grant
- Patent Title: MTJ bottom metal via in a memory cell and method for producing the same
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Application No.: US16046648Application Date: 2018-07-26
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Publication No.: US10693054B2Publication Date: 2020-06-23
- Inventor: Danny Pak-Chum Shum , Wanbing Yi , Curtis Chun-I Hsieh , Yi Jiang , Juan Boon Tan , Benfu Lin
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L43/02 ; H01L43/12 ; H01L27/22
Abstract:
A method of forming a memory cell with a high aspect ratio metal via formed underneath a metal tunnel junction (MTJ) and the resulting device are provided. Embodiments include a device having a metal via formed underneath a metal tunnel junction (MTJ) in a memory cell, and the metal via has an aspect ratio smaller than 2.
Public/Granted literature
- US20200035906A1 MTJ BOTTOM METAL VIA IN A MEMORY CELL AND METHOD FOR PRODUCING THE SAME Public/Granted day:2020-01-30
Information query
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