- 专利标题： Methods for processing semiconductor wafers having a polycrystalline finish
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申请号： US15577515申请日： 2016-05-26
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公开(公告)号： US10699908B2公开(公告)日： 2020-06-30
- 发明人: Guoqiang David Zhang , Mark Crooks , Tracy Michelle Ragan
- 申请人： SunEdison Semiconductor Limited
- 申请人地址： TW Hsinchu
- 专利权人： GlobalWafers Co., Ltd.
- 当前专利权人： GlobalWafers Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Armstrong Teasdale LLP
- 国际申请： PCT/US2016/034428 WO 20160526
- 国际公布： WO2016/196216 WO 20161208
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/321 ; H01L21/306 ; H01L21/304 ; H01L21/02 ; B24B53/017
摘要：
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.
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