Static random access memory
Abstract:
A static random access memory (SRAM) structure includes a first inverter comprising a first pull-up transistor and a first pull-down transistor, a second inverter comprising a second pull-up transistor and a second pull-down transistor, a first pass transistor coupled to the first inverter, and a second pass transistor coupled to the second inverter. Preferably, the first inverter is coupled to a first tunnel magnetoresistance (TMR) structure and the second inverter is coupled to a second TMR structure.
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