Invention Grant
- Patent Title: Static random access memory
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Application No.: US16019521Application Date: 2018-06-26
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Publication No.: US10706914B2Publication Date: 2020-07-07
- Inventor: Chun-Yen Tseng , Ching-Cheng Lung , Yu-Tse Kuo , Chun-Hsien Huang , Hsin-Chih Yu , Shu-Ru Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4a92dffa
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; G11C11/419 ; H01L43/08 ; G11C7/12 ; H01L27/11 ; H01L43/02 ; H01L43/10 ; G01R33/09 ; G11C8/08

Abstract:
A static random access memory (SRAM) structure includes a first inverter comprising a first pull-up transistor and a first pull-down transistor, a second inverter comprising a second pull-up transistor and a second pull-down transistor, a first pass transistor coupled to the first inverter, and a second pass transistor coupled to the second inverter. Preferably, the first inverter is coupled to a first tunnel magnetoresistance (TMR) structure and the second inverter is coupled to a second TMR structure.
Public/Granted literature
- US20190362776A1 STATIC RANDOM ACCESS MEMORY Public/Granted day:2019-11-28
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