Invention Grant
- Patent Title: Memory device
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Application No.: US16100295Application Date: 2018-08-10
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Publication No.: US10706920B2Publication Date: 2020-07-07
- Inventor: Chea Ouk Lim , Tae Hui Na , Jung Sunwoo , Yong Jun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@d2310d2 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5c4d252d
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/56

Abstract:
A memory device includes: a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a switching element, and a data storage element connected to the switching element, wherein the data storage element includes a phase change material; and a memory controller configured to perform a control operation with respect to a first memory cell of the plurality of memory cells by inputting an operating current to the first memory cell, and inputting a compensation current flowing from the data storage element to the switching element in the first memory cell before or after inputting the operating current to the first memory cell.
Public/Granted literature
- US20190130969A1 MEMORY DEVICE Public/Granted day:2019-05-02
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