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    Memory device
    1.
    发明授权
    Memory device 有权

    公开(公告)号：US10706920B2

    公开(公告)日：2020-07-07

    申请号：US16100295

    申请日：2018-08-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chea Ouk Lim ,  Tae Hui Na ,  Jung Sunwoo ,  Yong Jun Lee

    IPC: G11C13/00 ,  G11C11/56

    Abstract: A memory device includes: a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a switching element, and a data storage element connected to the switching element, wherein the data storage element includes a phase change material; and a memory controller configured to perform a control operation with respect to a first memory cell of the plurality of memory cells by inputting an operating current to the first memory cell, and inputting a compensation current flowing from the data storage element to the switching element in the first memory cell before or after inputting the operating current to the first memory cell.

    Memory device with read-write-read memory controller
    5.
    发明授权
    Memory device with read-write-read memory controller 有权

    公开(公告)号：US11056187B2

    公开(公告)日：2021-07-06

    申请号：US16034921

    申请日：2018-07-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Hui Na ,  Mu Hui Park ,  Kwang Jin Lee ,  Yong Jun Lee

    IPC: G11C13/00 ,  H01L45/00

    Abstract: A memory device includes a memory cell array including a plurality of memory cells, each of the plurality of memory cells having a switch element, and a data storage element connected to the switch element and containing a phase-change material; and a memory controller for obtaining first read voltages from the plurality of memory cells, inputting a first write current to the plurality of memory cells, and then, obtaining second read voltages from the plurality of memory cells, wherein the memory controller compares the first read voltage of a first memory cell of the plurality of memory cells to the second read voltage of the first memory cell to determine a state of the first memory cell.

    Nonvolatile memory device and operating method of the same
    9.
    发明授权
    Nonvolatile memory device and operating method of the same 有权

    公开(公告)号：US10121525B2

    公开(公告)日：2018-11-06

    申请号：US15793497

    申请日：2017-10-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong Jun Lee

    IPC: G11C7/00 ,  G11C11/16 ,  G11C7/22 ,  G11C7/12 ,  G11C7/10 ,  G11C11/56 ,  G11C13/00

    Abstract: A nonvolatile memory device includes memory banks and write block circuits. Each of the memory banks includes an array of memory cells. Each of the memory cells is disposed in a region of the memory banks in which bit lines and word lines intersect. The write block circuits are connected to the memory banks. Each of the write block circuits includes write drivers, that are each connected to the bit lines. The write block circuits provide a write current of the memory cells to the bit lines. A total number of write block circuits is used to determine the number of memory banks that are simultaneously provided with a write command from a host. A total number of write drivers that are activated is based on a predetermined reference value.

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