- 专利标题： Depositing ruthenium layers in interconnect metallization
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申请号： US15996925申请日： 2018-06-04
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公开(公告)号： US10731250B2公开(公告)日： 2020-08-04
- 发明人: Do Young Kim , Jeong-Seok Na , Chiukin Steven Lai , Raashina Humayun , Michal Danek
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/18 ; H01L23/532 ; H01L21/02 ; H01L21/768 ; C23C16/54 ; H01L23/522 ; C23C16/509 ; H01L21/285 ; C23C16/448 ; C23C16/52
摘要：
In some embodiments, deposition processes for ruthenium (Ru) feature fill include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.
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