Invention Grant
- Patent Title: Depositing ruthenium layers in interconnect metallization
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Application No.: US15996925Application Date: 2018-06-04
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Publication No.: US10731250B2Publication Date: 2020-08-04
- Inventor: Do Young Kim , Jeong-Seok Na , Chiukin Steven Lai , Raashina Humayun , Michal Danek
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/18 ; H01L23/532 ; H01L21/02 ; H01L21/768 ; C23C16/54 ; H01L23/522 ; C23C16/509 ; H01L21/285 ; C23C16/448 ; C23C16/52
Abstract:
In some embodiments, deposition processes for ruthenium (Ru) feature fill include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.
Public/Granted literature
- US20180347041A1 DEPOSITING RUTHENIUM LAYERS IN INTERCONNECT METALLIZATION Public/Granted day:2018-12-06
Information query
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