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    METHOD FOR VOID-FREE COBALT GAP FILL
    2.
    发明申请
    METHOD FOR VOID-FREE COBALT GAP FILL 有权
    无空隙煤隙填充方法

    公开(公告)号：US20160056074A1

    公开(公告)日：2016-02-25

    申请号：US14465610

    申请日：2014-08-21

    申请人： Lam Research Corporation

    发明人： Jeong-Seok Na ,  Tianhua Yu ,  Michal Danek ,  Sanjay Gopinath

    IPC分类号： H01L21/768 ,  H01L21/3205 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  H01L21/326 ,  C23C16/52

    CPC分类号： H01L21/76876 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53266

    摘要： Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors.

    摘要翻译： 本文提供了将无空隙钴沉积到具有高纵横比的特征中的方法。 方法包括：（a）用钴部分填充特征，（b）将特征暴露于由含氮气体产生的等离子体，以选择性地抑制在特征附近或顶部的表面上的钴成核，任选地重复（a）和（ b），并通过化学气相沉积将体积钴沉积到特征中。 方法还可以包括将包含阻挡层的特征暴露于由含氮气体产生的等离子体以选择性地抑制钴成核。 所述方法可以使用含钴前体在低于约400℃的低温下进行。

    Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide
    5.
    发明授权
    Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide 有权

    公开(公告)号：US10229826B2

    公开(公告)日：2019-03-12

    申请号：US15729081

    申请日：2017-10-10

    申请人： Lam Research Corporation

    发明人： Raihan Tarafdar ,  Shruti Thombare ,  Jeong-Seok Na ,  Raashina Humayun ,  Chiukin Steven Lai

    IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/768

    摘要： A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes a material selected from a group consisting of tantalum nitride, titanium nitride, tantalum and titanium. The method includes b) supplying a gas selected from a group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes c) depositing a metal layer on the barrier layer after b). The metal layer includes a metal selected from a group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.

    METHOD FOR VOID-FREE COBALT GAP FILL
    6.
    发明申请
    METHOD FOR VOID-FREE COBALT GAP FILL 有权
    无空隙煤隙填充方法

    公开(公告)号：US20160056077A1

    公开(公告)日：2016-02-25

    申请号：US14873152

    申请日：2015-10-01

    申请人： Lam Research Corporation

    发明人： Chiukin Steven Lai ,  Jeong-Seok Na ,  Raihan Tarafdar ,  Raashina Humayun ,  Michal Danek

    IPC分类号： H01L21/768 ,  H01J37/32 ,  H01L21/02 ,  H01L21/288 ,  H01L21/285

    CPC分类号： H01L21/76879 ,  C23C16/045 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L23/53266

    摘要： Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors. Methods may also involve using a remote plasma source to generate the nitrogen-based plasma. Methods also involve annealing the substrate.

    摘要翻译： 本文提供了将无空隙钴沉积到具有高纵横比的特征中的方法。 方法包括：（a）用钴部分填充特征，（b）将特征暴露于由含氮气体产生的等离子体，以选择性地抑制在特征附近或顶部的表面上的钴成核，任选地重复（a）和（ b），并通过化学气相沉积将体积钴沉积到特征中。 方法还可以包括将包含阻挡层的特征暴露于由含氮气体产生的等离子体以选择性地抑制钴成核。 所述方法可以使用含钴前体在低于约400℃的低温下进行。 方法还可以包括使用远程等离子体源来产生氮基等离子体。 方法还包括使基板退火。