Invention Grant
- Patent Title: Sensor characteristic evaluation method and charged particle beam device
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Application No.: US16182659Application Date: 2018-11-07
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Publication No.: US10737937B2Publication Date: 2020-08-11
- Inventor: Toshiyuki Mine , Keiji Watanabe , Koji Fujisaki , Masaharu Kinoshita , Masatoshi Morishita , Daisuke Ryuzaki
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koening, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3f31e95b
- Main IPC: B81C99/00
- IPC: B81C99/00 ; G01R31/28 ; H01J37/30 ; H01J37/305 ; H01J37/304 ; G01R31/50

Abstract:
A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.
Public/Granted literature
- US20190292046A1 SENSOR CHARACTERISTIC EVALUATION METHOD AND CHARGED PARTICLE BEAM DEVICE Public/Granted day:2019-09-26
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