公开(公告)号：US12276573B2

公开(公告)日：2025-04-15

申请号：US17925537

申请日：2021-03-16

Applicant: HITACHI, LTD.

Inventor： Yuudai Kamada ,  Toshiyuki Mine

IPC: G01M3/24 ,  G01M7/02

Abstract: A water leakage position estimation system(S) configured to estimate a water leakage position in a pipe network including a plurality of pipe routes includes a water leakage determination unit (11) and an estimation unit (12e). The water leakage determination unit (11) determines whether a water leakage occurs in the pipe network based on a measured value of a vibration related to the pipe network that is acquired by a water leakage sensor (2) provided in the pipe network. The estimation unit (12e) estimates, when the water leakage determination unit (11) determines that a water leakage occurs in the pipe network, a pipe route in which the water leakage occurs from the plurality of pipe routes based on the measured value and a predicted value of the vibration for each pipe route acquirable by the water leakage sensor (2) when a water leakage occurs in each pipe route.

公开(公告)号：US10737937B2

公开(公告)日：2020-08-11

申请号：US16182659

申请日：2018-11-07

Applicant: HITACHI, LTD.

Inventor： Toshiyuki Mine ,  Keiji Watanabe ,  Koji Fujisaki ,  Masaharu Kinoshita ,  Masatoshi Morishita ,  Daisuke Ryuzaki

IPC: B81C99/00 ,  G01R31/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/304 ,  G01R31/50

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

公开(公告)号：US10662059B2

公开(公告)日：2020-05-26

申请号：US16015640

申请日：2018-06-22

Applicant: HITACHI, LTD.

Inventor： Keiji Watanabe ,  Hiroyasu Shichi ,  Misuzu Sagawa ,  Toshiyuki Mine ,  Daisuke Ryuzaki

IPC: B81C99/00 ,  H01J37/317 ,  H01J37/304 ,  H01J37/147 ,  G03F7/20 ,  B81C1/00 ,  H01J37/305

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

公开(公告)号：US10852209B2

公开(公告)日：2020-12-01

申请号：US16556746

申请日：2019-08-30

Applicant: HITACHI, LTD.

Inventor： Toshiyuki Mine ,  Yuudai Kamada ,  Tetsuya Ishimaru ,  Kazuo Ono

IPC: G08B21/00 ,  G01M3/24 ,  G01M3/18 ,  G01M3/00

Abstract: A water leak sensing system includes: a plurality of sensor terminals including a sensor installed in a pipeline of a water supply network; and a computer that senses a water leak from the pipeline based on detection signal data of the plurality of sensors of the plurality of sensor terminals, and outputs a result. The pipeline is either a first pipeline not covered by a pipe covering member (PE sleeve) or a second pipeline covered by the pipe covering member. The sensor can detect a signal at a first distance from a water leak point when the water leak occurs in the first pipeline, and detect a signal at a second distance, longer than the first distance, from the water leak point when the water leak occurs in the second pipeline.

公开(公告)号：US20140346515A1

公开(公告)日：2014-11-27

申请号：US14372750

申请日：2012-11-19

Applicant: Hitachi, Ltd.

Inventor： Itaru Yanagi ,  Masahiko Ando ,  Toshiyuki Mine ,  Taro Osabe ,  Tomoyuki Ishii

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78675 ,  B82Y10/00 ,  G01N33/48721 ,  H01L29/0673 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66787 ,  H01L29/7613 ,  H01L29/78648

Abstract: Detection accuracy of a semiconductor device for detecting various kinds of substances including biological matter such as DNA is to be increased. This semiconductor device includes: a channel region CH placed on a first surface of a silicon oxide film 110; source/drain regions placed on both sides of the channel region CH; a gate electrode G placed on the first surface at a distance from the channel region CH, the gate electrode G being located to face a side surface xz1 of the channel region CH; an insulating film Z located between the channel region CH and the gate electrode G; and a pore P extending parallel to the side surface xz1 of the channel region CH, the pore P being perpendicular to the first surface. A test object such as DNA 200 is introduced into the pore P, and field changes caused by the test object in an inversion layer 10 formed in the side surface xz1 of the channel region CH is detected as changes in the current flowing between the source/drain regions.

Abstract translation: 检测用于检测各种物质（包括生物物质如DNA）的半导体器件的检测精度将被增加。 该半导体器件包括：放置在氧化硅膜110的第一表面上的沟道区CH; 源极/漏极区域放置在沟道区域CH的两侧; 栅极电极G位于与沟道区域CH一定距离的第一表面上，栅电极G位于沟道区域CH的侧表面xz1处; 位于沟道区域CH和栅电极G之间的绝缘膜Z; 以及平行于沟道区域CH的侧表面xz1延伸的孔P，孔P垂直于第一表面。 将诸如DNA 200的测试对象引入到孔P中，并且检测由形成在沟道区CH的侧表面xz1中的反型层10中由被测试物引起的场变化，作为源极/ 漏区。

公开(公告)号：US20140217422A1

公开(公告)日：2014-08-07

申请号：US14240376

申请日：2012-03-30

Applicant: HITACHI, LTD.

Inventor： Toshiyuki Mine ,  Yasuhiro Shimamoto ,  Hirotaka Hamamura

IPC: H01L29/16 ,  H01L29/792

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/049 ,  H01L29/513 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7828 ,  H01L29/792

Abstract: In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage.

Abstract translation: 在使用SiC衬底的SiC-MOSFET功率器件中，采用具有电荷俘获特性的层叠绝缘膜作为SiC-DiMOSFET的栅极绝缘膜，并且将电荷注入到层叠绝缘膜中，从而抑制 门极电压的变化。

公开(公告)号：US10276341B2

公开(公告)日：2019-04-30

申请号：US15909601

申请日：2018-03-01

Applicant: Hitachi, Ltd.

Inventor： Keiji Watanabe ,  Toshiyuki Mine ,  Hiroyasu Shichi ,  Masatoshi Morishita

IPC: H01J37/15 ,  H01J37/30 ,  H01J37/147 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

公开(公告)号：US09570601B2

公开(公告)日：2017-02-14

申请号：US14904685

申请日：2013-07-16

Applicant: HITACHI, LTD.

Inventor： Yuki Mori ,  Toshiyuki Mine ,  Hiroshi Miki ,  Mieko Matsumura ,  Hirotaka Hamamura

IPC: H01L29/15 ,  H01L31/0312 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/16 ,  H01L29/45

CPC classification number: H01L29/7802 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66068

Abstract: Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor material having a larger band gap than silicon is used, and which is typified by, for example, an SiC power MOSFET. In order to achieve this object, in the in the SiC power MOSFET, the gate electrode GE is formed in contact with the gate insulating film GOX, and is formed of the polycrystalline silicon film PF1 having the thickness equal to or smaller than 200 nm, and the polycrystalline silicon film PF2 formed in contact with the polycrystalline silicon film PF1, and having any thickness.

Abstract translation: 提供了一种在半导体器件中与Si功率MOSFET一样多地确保栅极绝缘膜的可靠性的技术，其中使用具有比硅更大的带隙的半导体材料，并且其典型例如为 一个SiC功率MOSFET。 为了实现该目的，在SiC功率MOSFET中，栅电极GE形成为与栅极绝缘膜GOX接触，并且由厚度等于或小于200nm的多晶硅膜PF1形成， 和形成为与多晶硅膜PF1接触并且具有任何厚度的多晶硅膜PF2。