Invention Grant
- Patent Title: Pre-patterned etch stop for interconnect trench formation overlying embedded MRAM structures
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Application No.: US16242583Application Date: 2019-01-08
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Publication No.: US10741609B2Publication Date: 2020-08-11
- Inventor: Gangadhara Raja Muthinti , Michael Rizzolo , Oscar Van Der Straten , Chih-Chao Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; H01L43/14 ; H01L23/528 ; H01L23/522 ; H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
Integration of structures including an embedded magnetoresistive random access memory (MRAM) device such as a magnetic tunneling junction device includes pre-patterned etch stop layers to prevent excessive etching of the interlayer dielectric during a via open step.
Public/Granted literature
- US20200219932A1 PRE-PATTERNED ETCH STOP FOR INTERCONNECT TRENCH FORMATION OVERLYING EMBEDDED MRAM STRUCTURES Public/Granted day:2020-07-09
Information query
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