Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16285068Application Date: 2019-02-25
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Publication No.: US10777573B2Publication Date: 2020-09-15
- Inventor: Yuta Saito , Shinji Mori , Keiichi Sawa , Kazuhisa Matsuda , Kazuhiro Matsuo , Hiroyuki Yamashita
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@18fe93b0
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/324 ; H01L23/532 ; H01L21/28
Abstract:
A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.
Public/Granted literature
- US20190371810A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-12-05
Information query
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