公开(公告)号：US10923487B2

公开(公告)日：2021-02-16

申请号：US16287914

申请日：2019-02-27

Applicant: Toshiba Memory Corporation

Inventor： Hiroyuki Yamashita ,  Shinji Mori ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Yuta Saito ,  Atsushi Takahashi ,  Masayuki Tanaka

IPC: H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.

公开(公告)号：US10777573B2

公开(公告)日：2020-09-15

申请号：US16285068

申请日：2019-02-25

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuta Saito ,  Shinji Mori ,  Keiichi Sawa ,  Kazuhisa Matsuda ,  Kazuhiro Matsuo ,  Hiroyuki Yamashita

IPC: H01L27/11582 ,  H01L21/324 ,  H01L23/532 ,  H01L21/28

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

公开(公告)号：US10910401B2

公开(公告)日：2021-02-02

申请号：US16559165

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC: H01L27/11582 ,  H01L29/792 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/1157

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.