Invention Grant
- Patent Title: Control circuit for half-bridge diodes
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Application No.: US14525460Application Date: 2014-10-28
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Publication No.: US10784787B2Publication Date: 2020-09-22
- Inventor: Bertrand Rivet , Greca Jean Charles , Frederic Lanois
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee Address: FR Tours
- Agency: Crowe & Dunlevy
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@23f2c458
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H03K17/16 ; H03K17/687 ; H03K17/74 ; H02M1/08 ; H03K3/012

Abstract:
A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.
Public/Granted literature
- US20150117063A1 CONTROL CIRCUIT FOR HALF-BRIDGE DIODES Public/Granted day:2015-04-30
Information query
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