Invention Grant
- Patent Title: Magnetoresistance effect element
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Application No.: US16587178Application Date: 2019-09-30
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Publication No.: US10790440B2Publication Date: 2020-09-29
- Inventor: Tomoyuki Sasaki , Tatsuo Shibata , Katsuyuki Nakada , Yoshitomo Tanaka
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@305b71a1
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L43/08 ; H01L43/10 ; G11C11/16 ; H01L27/22 ; H01L43/02 ; H01L43/12 ; G11B5/39
Abstract:
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
Public/Granted literature
- US20200052194A1 MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2020-02-13
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