Invention Grant
- Patent Title: Memory system and error correcting method thereof
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Application No.: US16203862Application Date: 2018-11-29
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Publication No.: US10795763B2Publication Date: 2020-10-06
- Inventor: Yong-Ju Kim , Do-Sun Hong , Dong-Gun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@69075330
- Main IPC: G11C29/52
- IPC: G11C29/52 ; G06F11/10 ; G11C29/44 ; G11C29/42 ; H03M13/15 ; G11C29/04

Abstract:
A memory system includes a plurality of memory chips suitable for storing data and an error correction code thereof, an error correction circuit suitable for detecting and correcting error bits of data, which are read from the plurality of memory chips, based on an error correction code of the read data, an address storage circuit suitable for storing addresses of first data, among the read data, the first data having a number of detected error bits greater than or equal to a first number, and a failed chip detection circuit suitable for, when the number of the stored addresses is greater than or equal to a second number, detecting a failed memory chip where a chip-kill occurs by writing test data in the plurality of memory chips and reading back the written test data.
Public/Granted literature
- US20190163570A1 MEMORY SYSTEM AND ERROR CORRECTING METHOD THEREOF Public/Granted day:2019-05-30
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