Invention Grant
- Patent Title: Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
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Application No.: US16359040Application Date: 2019-03-20
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Publication No.: US10797231B2Publication Date: 2020-10-06
- Inventor: Tomoyuki Sasaki , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@125199e4 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@758d2066
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L43/04 ; G11C11/18 ; H01L43/02 ; G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L43/14

Abstract:
A spin-orbit torque type magnetization reversal element including a ferromagnetic metal layer with a varying magnetization direction; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the ferromagnetic metal layer and that is joined to the ferromagnetic metal layer; wherein when viewed from the first direction, the spin-orbit torque wiring is asymmetrical in a second direction that is orthogonal to the first direction and the stacking direction, with respect to an axis that passes through a center, in the second direction, of the ferromagnetic metal layer.
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