- 专利标题： Optoelectronic device with modulation doping
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申请号： US15966022申请日： 2018-04-30
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公开(公告)号： US10804423B2公开(公告)日： 2020-10-13
- 发明人: Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur
- 申请人： Sensor Electronic Technology, Inc.
- 申请人地址： US SC Columbia
- 专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人地址： US SC Columbia
- 代理机构： LaBatt, LLC
- 主分类号： H01L31/0352
- IPC分类号： H01L31/0352 ; H01L33/00 ; H01L31/105 ; H01L31/0224 ; H01L33/32 ; H01L33/04 ; H01L33/14 ; H01L33/02 ; H01L31/0304 ; H01L31/109 ; H01L33/06
摘要：
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
公开/授权文献
- US20180248071A1 Optoelectronic Device with Modulation Doping 公开/授权日：2018-08-30
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