Invention Grant
- Patent Title: Method for forming semiconductor structure
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Application No.: US16416279Application Date: 2019-05-20
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Publication No.: US10854520B2Publication Date: 2020-12-01
- Inventor: Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Chun-Hsien Lin , Wei-Hao Huang , Kai-Teng Cheng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/321 ; H01L21/28 ; H01L21/30 ; H01L27/092 ; H01L21/8238
Abstract:
The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.
Public/Granted literature
- US20190279909A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-09-12
Information query
IPC分类:
