An example method for determining likelihood of erroneous data bits stored in memory cells may include sensing a first plurality of memory cells based on a first sense thresholds. Responsive to sensing the first plurality of cells, a first set of probabilistic information may be associated with the first plurality of memory cells. A second plurality of memory cells may be sensed based on a second sense threshold. Responsive to sensing the second plurality of memory cells, a second set of probabilistic information may be associated with the second plurality of memory cells. An error correction operation may be performed on the first and second pluralities of memory cells based, at least in part, on the first and second values.