Invention Grant
- Patent Title: Composition for removing silicone resins and method of thinning substrate by using the same
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Application No.: US15984050Application Date: 2018-05-18
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Publication No.: US10894935B2Publication Date: 2021-01-19
- Inventor: In-goo Kang , Sung-bae Kim , Baik-soon Choi , Sue-ryeon Kim , Young-taek Hong , Sang-tae Kim , Kyong-ho Lee , Hyung-pyo Hong , Seong-min Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , Dongwoo Fine-Chem Co., Ltd.
- Applicant Address: KR Suwon-si; KR Iksan-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee Address: KR Suwon-si; KR Iksan-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0172656 20151204
- Main IPC: C11D1/00
- IPC: C11D1/00 ; C11D3/28 ; C11D3/20 ; C11D3/30 ; C11D7/50 ; H01L21/683 ; H01L21/02 ; C11D7/32 ; C11D11/00 ; H01L21/311 ; H01L21/768 ; C11D3/00 ; H01L21/304 ; C11D3/43 ; C11D3/24 ; C09J183/04 ; B32B43/00 ; H01L21/67 ; H01L25/065 ; H01L23/00 ; B32B38/10 ; C11D7/26

Abstract:
Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)4N+F−, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.
Public/Granted literature
- US20180265819A1 COMPOSITION FOR REMOVING SILICONE RESINS AND METHOD OF THINNING SUBSTRATE BY USING THE SAME Public/Granted day:2018-09-20
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