Invention Grant
- Patent Title: Integrated fan-out package and method of fabricating the same
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Application No.: US16416278Application Date: 2019-05-20
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Publication No.: US10930586B2Publication Date: 2021-02-23
- Inventor: Yi-Wen Wu , Hung-Jui Kuo , Ming-Che Ho
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/522 ; H01L23/00 ; H01L23/532 ; H01L21/768 ; H01L23/538 ; H01L25/10

Abstract:
An integrated fan-out package includes a die, an insulating encapsulation, a redistribution circuit structure, conductive terminals, and barrier layers. The insulating encapsulation encapsulates the die. The redistribution circuit structure includes a first redistribution conductive layer on the insulating encapsulation, a first inter-dielectric layer covering the first redistribution conductive layer, and a second redistribution conductive layer on the first inter-dielectric layer. The first redistribution conductive layer includes conductive through vias extending from a first surface of the insulating encapsulation to a second surface of the insulating encapsulation. The first inter-dielectric layer includes contact openings, portions of the second redistribution conductive layer filled in the contact openings are in contact with the first redistribution conductive layer and offset from the conductive through vias. The conductive terminals are disposed over the second surface of the insulating encapsulation. The barrier layers respectively are disposed between the conductive through vias and the conductive terminals.
Public/Granted literature
- US20190279929A1 INTEGRATED FAN-OUT PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-09-12
Information query
IPC分类: