Invention Grant
- Patent Title: Method for performing power saving control in a memory device, associated memory device and memory controller thereof, and associated electronic device
-
Application No.: US16273166Application Date: 2019-02-12
-
Publication No.: US10936046B2Publication Date: 2021-03-02
- Inventor: Wen-Chi Chao , Kuo-Cyuan Kuo
- Applicant: Silicon Motion Inc.
- Applicant Address: TW Hsinchu County
- Assignee: Silicon Motion Inc.
- Current Assignee: Silicon Motion Inc.
- Current Assignee Address: TW Hsinchu County
- Agent Winston Hsu
- Main IPC: G06F1/3234
- IPC: G06F1/3234 ; G06F1/3237 ; G06F13/16

Abstract:
A method for performing power saving control in memory device, the associated memory device and memory controller thereof, and the associated electronic device are provided, where the method is applicable to the memory controller, and the memory device includes the memory controller and a non-volatile (NV) memory. The method may include: during transmitting to a host device, sending end of burst (EOB)-related symbols to the host device, in order to notify the host device of EOB; controlling a physical layer (PHY) circuit to turn off a clock source within the PHY circuit, in order to save power, wherein the PHY circuit is positioned in a transmission interface circuit within the memory controller, and the transmission interface circuit is arranged to perform communications with the host device for the memory device; and when receiving a trigger signal from the host device, utilizing the PHY circuit to turn on the clock source.
Information query