Invention Grant
- Patent Title: Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device
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Application No.: US16114692Application Date: 2018-08-28
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Publication No.: US10943631B2Publication Date: 2021-03-09
- Inventor: Tomoyuki Sasaki , Yohei Shiokawa , Jiro Yoshinari
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-169735 20170904,JPJP2018-158294 20180827
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G01R33/09 ; H01L43/04 ; H01L43/08 ; H01L43/10 ; H01L43/14 ; H01L43/06 ; G11C11/18 ; H01L43/02

Abstract:
A spin current magnetization reversing element (100) includes a spin orbit torque wiring layer (101) that extends in one direction, a first ferromagnetic layer (102) that is formed on a first surface (101a) of the spin orbit torque wiring layer, and a first insulating layer (103) that is formed on a second surface (101b) on a side opposite to the first ferromagnetic layer (102) side on the surface of the spin orbit torque wiring layer. The first insulating layer (103) contains boron nitride or aluminum nitride.
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