Invention Grant
- Patent Title: Methods of forming integrated assemblies
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Application No.: US16751116Application Date: 2020-01-23
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Publication No.: US10943921B2Publication Date: 2021-03-09
- Inventor: Jordan D. Greenlee , Chet E. Carter , Collin Howder , John Mark Meldrim , Everett A. McTeer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/3213 ; H01L29/10 ; H01L21/768 ; H01L23/532 ; H01L21/285 ; H01L23/528 ; H01L27/11556 ; H01L21/28 ; H01L29/49 ; H01L27/11519 ; H01L27/11565
Abstract:
Some embodiments include a method of forming an integrated structure. An assembly is formed to include a stack of alternating first and second levels. The first levels have insulative material, and the second levels have voids which extend horizontally. The assembly includes channel material structures extending through the stack. A first metal-containing material is deposited within the voids to partially fill the voids. The deposited first metal-containing material is etched to remove some of the first metal-containing material from within the partially-filled voids. Second metal-containing material is then deposited to fill the voids.
Public/Granted literature
- US20200161332A1 Methods of Forming Integrated Assemblies Public/Granted day:2020-05-21
Information query
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