- Patent Title: Method for analyzing electromigration (EM) in integrated circuit
-
Application No.: US16734487Application Date: 2020-01-06
-
Publication No.: US10963609B2Publication Date: 2021-03-30
- Inventor: Chin-Shen Lin , Ming-Hsien Lin , Wan-Yu Lo , Meng-Xiang Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F30/00
- IPC: G06F30/00 ; G06F30/3308 ; G06F30/392 ; G06F119/10 ; G06F119/02
Abstract:
Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to the current simulation result of the IC. It is determined whether to relax the EM rule on the metal segment according to the number of vias over the metal segment in the layout. The vias are in contact with the metal segment.
Public/Granted literature
- US20210042460A1 METHOD FOR ANALYZING ELECTROMIGRATION (EM) IN INTEGRATED CIRCUIT Public/Granted day:2021-02-11
Information query
